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PD - 94913
IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Low VCE (on) Non Punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. * Maximum Junction Temperature Rated at 175C * Lead-Free
C
VCES = 600V IC = 10A, TC=100C
G E
tsc > 10s, TJ=150C
n-channel
VCE(on) typ. = 1.7V
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFM VISOL VGE PD @ TC = 25C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
TO-220 Full-Pak
Max.
600 16 10 A 32 32 16 10 32 2500 20 44 22 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V
Units
V
c
Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation
PD @ TC = 100C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RJC RJC RCS RJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.50 --- 2.0
Max.
3.4 5.3 --- 62 ---
Units
C/W
g
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1
12/29/03
IRGIB10B60KD1P (unless otherwise specified) Electrical Characteristics @ T = 25C
J
Parameter
Min. Typ. Max. Units
-- 0.99 1.70 2.05 2.06 4.5 -10 5.0 1.0 90 150 1.80 1.32 1.23 --
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 1.50 VCE(on) Collector-to-Emitter Voltage -- -- VGE(th) Gate Threshold Voltage 3.5 VGE(th)/TJ Threshold Voltage temp. coefficient -- gfe Forward Transconductance -- -- ICES Zero Gate Voltage Collector Current -- -- VFM Diode Forward Voltage Drop -- -- -- IGES Gate-to-Emitter Leakage Current --
-- V VGE = 0V, IC = 500A -- V/C VGE = 0V, IC = 1mA (25C-150C) IC = 10A, VGE = 15V, TJ = 25C 2.10 2.35 V IC = 10A, VGE = 15V, TJ = 150C IC = 10A, VGE = 15V, TJ = 175C 2.35 5.5 V VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 1mA (25C-150C) -- S VCE = 50V, IC = 10A, PW = 80s VGE = 0V, VCE = 600V 150 250 A VGE = 0V, VCE = 600V, TJ = 150C VGE = 0V, VCE = 600V, TJ = 175C 400 2.40 V IF = 5.0A, VGE = 0V IF = 5.0A, VGE = 0V, TJ = 150C 1.74 IF = 5.0A, VGE = 0V, TJ = 175C 1.62 100 nA VGE = 20V, VCE = 0V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (PEAK) Erec trr Irr Qrr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge
Min. Typ. Max. Units
-- 41 62 -- 4.6 6.9 -- 19 29 -- 156 264 -- 165 273 -- 321 434 -- 25 33 -- 24 34 -- 180 250 -- 62 87 -- 261 372 -- 313 425 -- 574 694 -- 22 31 -- 24 34 -- 240 340 -- 48 67 -- 7.5 -- -- 610 915 -- 66 99 -- 23 35 FULL SQUARE 10 -- -- -- -- -- -- 100 99 79 14 553 -- -- 128 103 18 719 nC
Conditions
IC = 10A VCC = 400V VGE = 15V IC = 10A, VCC = 400V VGE = 15V, RG = 50, L = 1.07mH Ls= 150nH, TJ = 25C IC = 10A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH Ls= 150nH, TJ = 25C
J
d
ns
J
ns
IC = 10A, VCC = 400V VGE = 15V, RG = 50, L = 1.07mH Ls= 150nH, TJ = 150C IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.07mH Ls= 150nH, TJ = 150C
d
nH pF
s A J ns A nC
Measured 5 mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150C, IC = 32A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50 TJ = 150C, Vp = 600V, RG = 50 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 10A, L = 1.07mH VGE = 15V, RG = 50 di/dt = 500A/s
Vcc =80% (VCES), VGE = 15V, L =100H, RG = 50.
Energy losses include "tail" and diode reverse recovery.
2
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IRGIB10B60KD1P
20 50 45 16 40 35
Ptot (W)
12
IC (A)
30 25 20 15
8
4
10 5
0 0 20 40 60 80 100 120 140 160 180 T C (C)
0 0 20 40 60 80 100 120 140 160 180 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10
10 s 100 s
IC (A)
1 1ms 0.1 DC
IC A)
1 10 100 VCE (V) 1000 10000
10
0.01
1 10 100 1000
VCE (V)
Fig. 3 - Forward SOA TC = 25C; TJ 175C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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3
IRGIB10B60KD1P
20 18 16 14
ICE (A)
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
20 18 16 14 12 10 8 6 4 2 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
12 10 8 6 4 2 0 0 2 VCE (V) 4 6
0
2 VCE (V)
4
6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
20 18 16 14
ICE (A)
40
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
35 30 25
IF (A)
-40C 25C 150C
12 10 8 6 4 2 0 0
20 15 10 5 0
2 VCE (V)
4
6
0.0
0.5
1.0
1.5 VF (V)
2.0
2.5
3.0
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
Fig. 8 - Typ. Diode Forward Characteristics tp = 80s
4
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IRGIB10B60KD1P
20 18 16 14
VCE (V) VCE (V)
20 18 16 14 ICE = 5.0A ICE = 10A ICE = 20A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 5.0A ICE = 10A ICE = 20A
12 10 8 6 4 2 0
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
VCE (V)
100 90 80 70
ICE = 10A ICE = 20A
TJ = 25C TJ = 150C
12 10 8 6 4 2 0 5 10 VGE (V)
ICE (A)
ICE = 5.0A
60 50 40 30 20 10 T J = 150C T J = 25C 0 5 10 VGE (V) 15 20
15
20
0
Fig. 11 - Typical VCE vs. VGE TJ = 150C
Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
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IRGIB10B60KD1P
700 600 500
Energy (J)
1000
tdOFF
EOFF
Swiching Time (ns)
100
400 300 200 100 0 0 5 10 IC (A) 15
EON
tF tdON
10
tR
20
1 0 5 10 15 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=1.07mH; VCE= 400V RG= 50; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=1.07mH; VCE= 400V RG= 50; VGE= 15V
1000
10000
800
EOFF
Swiching Time (ns)
EON
1000
Energy (J)
600
tdOFF
400
100
200
tF tR tdON
10 0 100 200 300 400 500 0 100 200 300 400 500
0
RG ()
RG ()
Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=1.07mH; VCE= 400V ICE= 10A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=1.07mH; VCE= 400V ICE= 10A; VGE= 15V
6
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IRGIB10B60KD1P
15 16
RG = 50 RG = 150 RG = 270
5
14 12 10
10
IRR (A)
IRR (A)
20
8 6
RG = 470
4 2
0 0 5 10 15
0 0 100 200 300 400 500
IF (A)
RG ()
Fig. 17 - Typical Diode IRR vs. IF TJ = 150C
Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 10A
16 14
1000 150 800 270 470 50 20A 10A
12
8 6 4 2 0 0 200 400 600
Q RR (nC)
10
600
IRR (A)
400
5.0A
200
0 0 100 200 300 400 500 600 diF /dt (A/s)
diF /dt (A/s)
Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 150C
Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C
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IRGIB10B60KD1P
200
160
Energy (J)
120
470
80
270 150 50
40 0 5 10 15 20 25
IF (A)
Fig. 21 - Typical Diode ERR vs. IF TJ = 150C
1000
16
Cies
14 12
300V 400V
Capacitance (pF)
10
VGE (V)
100
8 6 4
Coes
Cres
10 1 10 100
2 0 0 10 20 30 40 50 Q G , Total Gate Charge (nC)
VCE (V)
Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 23 - Typical Gate Charge vs. VGE ICE = 10A; L = 2500H
8
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IRGIB10B60KD1P
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.3628 0.2582 1.1008 1.6973
i (sec)
0.00018 0.000695 0.075305 1.781
0.1
0.02 0.01
J
0.01
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.9004 1.3642 1.4540 1.5805
i (sec)
0.000103 0.000693 0.033978 1.6699
0.1
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1 1 10 100
0.01 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGIB10B60KD1P
L
L
0
DUT 1K
VCC
80 V
+ -
DUT Rg
480V
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
Driver
DC
diode clamp / DUT
L
360V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig.C.T.3 - S.C.SOA Circuit
VCC ICM
Fig.C.T.4 - Switching Loss Circuit
R=
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
10
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IRGIB10B60KD1P
600 tf 500 400 90% Ice 300 Vce (V) 5% Vce 200 5% Ice 100 0 -100 -200 0.4 0.6 0.8 Time (uS) 1 1.2 Eoff Loss Ice 2.5 0 -2.5 -5
100 5% Vce 5
15 12.5 10 7.5
Ice (A) Ice (A) Vce (V)
600
30
Vce
500
tr
Vce Ice
25
400
90% Ice 10% Ice
20
5
200
10
0 Eon Loss -100 0.05
0
-5 0.15 0.25 Time (uS) 0.35
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
100 QRR 0 tRR -100 5 10
300
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
15
400 200
150
Vce (V)
Vf (V)
200
100
-300
Peak IRR
10% Peak IRR
-5
-400
-10
100
50
-500
-15
0 0.00 0 50.00
-600 0.20
0.30
0.40 Time (uS)
0.50
-20 0.60
10.00
20.00
30.00
40.00
Time (uS)
Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4
Fig. WF4- Typ. S.C Waveform @ TC = 150C using Fig. CT.3
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11
Ice (A)
-200
0 If (A)
Ice (A)
300
15
IRGIB10B60KD1P
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L OT CODE P AR T N U M B E R
IR F I8 4 0 G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E C O D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K
TO-220 Full-Pak package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03
12
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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